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APT5019HVR
500V 24A 0.190
POWER MOS V (R)
TO-258
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-258 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT5019HVR UNIT Volts Amps
500 24 96 30 40 250 2.0 -55 to 150 300 24 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 24 0.190 25 250 100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
050-5816 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5019HVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT
4400 600 230 200 30 80 12 14 55 11
5280 840 350 300 45 120 25 30 80 20
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
24 96 1.3 510 10.2
(Body Diode) (VGS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.50 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.51mH, R = 25, Peak I = 24A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.05 0.02 0.01 0.005 SINGLE PULSE 0.01 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.1
050-5816 Rev B
Z 0.001 10-5
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5019HVR
60 ID, DRAIN CURRENT (AMPERES) 50 5.5V 40 30 5V 20 10 0 4.5V 4V VGS=6V, 7V, 8V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 60 50 40 30 5V 20 10 0 4.5V 4V VGS=15V VGS=7V, 8V & 10V 6V
5.5V
0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 60 ID, DRAIN CURRENT (AMPERES) 50 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.5
V
GS
TJ = +125C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.4
40 30
1.3 1.2
VGS=10V VGS=20V
20 10 0
TJ = +125C TJ = +25C TJ = -55C
1.1 1.0 0.9
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 24 ID, DRAIN CURRENT (AMPERES) 20 16 12 8 4 0
0
20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I = 0.5 I [Cont.]
D D GS
1.15 1.10 1.05 1.00 0.95 0.90
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V = 10V
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.85
-50
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5816 Rev B
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.6
-50
APT5019HVR
100 ID, DRAIN CURRENT (AMPERES) 50
OPERATION HERE LIMITED BY RDS (ON)
10S 100S C, CAPACITANCE (pF)
20,000 10,000 5,000 Ciss
10 5
1mS
10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC
Coss 1,000 500 Crss
.1
1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 300
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=100V VDS=250V 12 VDS=400V 8
16
100 50 TJ =+150C TJ =+25C
10 5
4
50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
TO-258 Package Outline
1.14 (.045) 0.88 (.035) 17.65 (.695) 17.39 (.685) 8.89 (.350) 8.63 (.340)
4.19 (.165) 3.94 (.155) 21.21 (.835) 20.70 (.815) 13.84 (.545) 13.58 (.535) 17.96 (.707) 17.70 (.697)
Drain
19.05 (0.750) 12.70 (0.500)
Source Gate
3.56 (.140) BSC 6.86 (.270) 6.09 (.240)
1.65 (.065) Dia. Typ. 1.39 (.055) 3 Leads 5.08 (.200) BSC
050-5816 Rev B
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058

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